DMN1150UFB-7B

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

1.41A Ta

Gate Charge (Qg) (Max) @ Vgs :

1.5nC @ 4.5V

Mounting Type :

Surface Mount

Power Dissipation-Max :

500mW Ta

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

57 ns

JESD-609 Code :

e4

Factory Lead Time :

15 Weeks

Continuous Drain Current (ID) :

1.41A

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Additional Feature :

High Reliability

Number of Channels :

1

Vgs (Max) :

±6V

Published :

2013

Number of Terminations :

3

Fall Time (Typ) :

30 ns

Operating Temperature :

-55°C~150°C TJ

Width :

675μm

Time@Peak Reflow Temperature-Max (s) :

30

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

106pF @ 10V

Transistor Application :

SWITCHING

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

1V @ 250μA

Transistor Element Material :

SILICON

Terminal Position :

BOTTOM

Height :

480μm

Turn On Delay Time :

4.1 ns

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

FET Type :

N-Channel

Rise Time :

34.5ns

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

12V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

6V

Package / Case :

3-UFDFN

Radiation Hardening :

No

Length :

1.08mm

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

150m Ω @ 1A, 4.5V

Operating Mode :

ENHANCEMENT MODE

Packaging :

Cut Tape (CT)