DMN10H700S-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

JESD-30 Code :

R-PDSO-G3

Series :

Automotive, AEC-Q101

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

400mW Ta

Current - Continuous Drain (Id) @ 25°C :

700mA Ta

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Terminal Position :

Dual

Factory Lead Time :

17 Weeks

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

High Reliability

FET Type :

N-Channel

Package / Case :

TO-236-3, SC-59, SOT-23-3

Published :

2016

Terminal Form :

Gull wing

Terminal Finish :

Matte Tin (Sn)

Rds On (Max) @ Id, Vgs :

700m Ω @ 1.5A, 10V

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

700mA

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

0.7A

Input Capacitance (Ciss) (Max) @ Vds :

235pF @ 50V

JESD-609 Code :

e3

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.7Ohm

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

4.6nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

100V

Number of Elements :

1

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant