DMN10H220LE-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Additional Feature :

High Reliability

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Base Part Number :

DMN10H22

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

220m Ω @ 1.6A, 10V

Turn-Off Delay Time :

7.9 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Rise Time :

8.2ns

Gate Charge (Qg) (Max) @ Vgs :

8.3nC @ 10V

Reference Standard :

AEC-Q101

Published :

2014

Current - Continuous Drain (Id) @ 25°C :

2.3A Ta

Drain to Source Voltage (Vdss) :

100V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Drain-source On Resistance-Max :

0.22Ohm

Factory Lead Time :

22 Weeks

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Mount :

Surface Mount

Power Dissipation-Max :

1.8W Ta

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Packaging :

Cut Tape (CT)

JESD-609 Code :

e3

Number of Pins :

3

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PDSO-G4

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

401pF @ 25V

Terminal Finish :

Matte Tin (Sn)

Fall Time (Typ) :

3.6 ns

Terminal Position :

Dual

Package / Case :

TO-261-4, TO-261AA

Pulsed Drain Current-Max (IDM) :

8A

Continuous Drain Current (ID) :

2.3A

DS Breakdown Voltage-Min :

100V

Number of Terminations :

4

Turn On Delay Time :

6.8 ns