DMN10H220L-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Mount :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2014

Reference Standard :

AEC-Q101

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Additional Feature :

High Reliability

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Voltage (Vdss) :

100V

DS Breakdown Voltage-Min :

100V

Base Part Number :

DMN10H220

JESD-30 Code :

R-PDSO-G3

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Tape and Reel (TR)

Factory Lead Time :

16 Weeks

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

1.4A

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

8.3nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

1.4A Ta

Drain-source On Resistance-Max :

0.22Ohm

Power Dissipation-Max :

1.3W Ta

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

220m Ω @ 1.6A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

401pF @ 25V

Vgs (Max) :

±16V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1