DMN10H099SFG-7
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- Mfr.Part #
- DMN10H099SFG-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 4.2A PWRDI3333
- Stock
- 956
- In Stock ：
- 956
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Channels :
- 1
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Matte Tin (Sn)
- Drain to Source Breakdown Voltage :
- 100V
- Rise Time :
- 5.9ns
- Current - Continuous Drain (Id) @ 25°C :
- 4.2A Ta
- Continuous Drain Current (ID) :
- 4.2A
- Gate Charge (Qg) (Max) @ Vgs :
- 25.2nC @ 10V
- Published :
- 2014
- JESD-609 Code :
- e3
- Input Capacitance (Ciss) (Max) @ Vds :
- 1172pF @ 50V
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Turn-Off Delay Time :
- 20 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Capacitance :
- 1.127nF
- FET Type :
- N-Channel
- Mount :
- Surface Mount
- Factory Lead Time :
- 23 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 80m Ω @ 3.3A, 10V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Turn On Delay Time :
- 5.4 ns
- Weight :
- 72.007789mg
- Package / Case :
- 8-PowerVDFN
- Fall Time (Typ) :
- 7.3 ns
- Mounting Type :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20V
- Packaging :
- Tape and Reel (TR)
- Power Dissipation-Max :
- 980mW Ta
- Number of Pins :
- 8
- Datasheets
- DMN10H099SFG-7
N-Channel Tape & Reel (TR) 80m Ω @ 3.3A, 10V ±20V 1172pF @ 50V 25.2nC @ 10V 8-PowerVDFN
DMN10H099SFG-7 Overview
A device's maximum input capacitance is 1172pF @ 50V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 4.2A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=100V, and this device has a drain-to-source breakdown voltage of 100V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 20 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 5.4 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (6V 10V) to reduce its overall power consumption.
DMN10H099SFG-7 Features
a continuous drain current (ID) of 4.2A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 20 ns
DMN10H099SFG-7 Applications
There are a lot of Diodes Incorporated
DMN10H099SFG-7 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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