DMN1053UCP4-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Vgs (Max) :

±8V

Input Capacitance (Ciss) (Max) @ Vds :

908pF @ 6V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Factory Lead Time :

17 Weeks

Terminal Finish :

Matte Tin (Sn)

Vgs(th) (Max) @ Id :

700mV @ 250μA

Mounting Type :

Surface Mount

Terminal Form :

Ball

Drain Current-Max (Abs) (ID) :

4A

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Package / Case :

4-XFBGA, CSPBGA

Drain-source On Resistance-Max :

0.053Ohm

Terminal Position :

BOTTOM

Peak Reflow Temperature (Cel) :

260

Drain to Source Voltage (Vdss) :

12V

Current - Continuous Drain (Id) @ 25°C :

2.7A Ta

Rds On (Max) @ Id, Vgs :

42m Ω @ 1A, 4.5V

Number of Terminations :

4

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

Power Dissipation-Max :

1.34W

Surface Mount :

yes

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 4.5V

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Feedback Cap-Max (Crss) :

126 pF

DS Breakdown Voltage-Min :

12V

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

S-PBGA-B4

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

30