DMN1045UFR4-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

45m Ω @ 3.2A, 4.5V

ECCN Code :

EAR99

JESD-609 Code :

e4

Factory Lead Time :

22 Weeks

Number of Terminations :

3

Published :

2014

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1V @ 250μA

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Power Dissipation-Max :

500mW Ta

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

3.2A Ta

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Dual

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.064Ohm

Input Capacitance (Ciss) (Max) @ Vds :

375pF @ 10V

Package / Case :

3-XFDFN

Continuous Drain Current (ID) :

3.2A

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

12V

Vgs (Max) :

±8V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

4.8nC @ 4.5V

Terminal Form :

NO LEAD

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

12V