DMN1032UCB4-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

900mW Ta

Additional Feature :

High Reliability

Continuous Drain Current (ID) :

4.8A

Rds On (Max) @ Id, Vgs :

26m Ω @ 1A, 4.5V

Terminal Position :

BOTTOM

Vgs (Max) :

±8V

Number of Elements :

1

Gate to Source Voltage (Vgs) :

8V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Number of Channels :

1

Number of Pins :

4

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Fall Time (Typ) :

9 ns

Rise Time :

5.6ns

FET Type :

N-Channel

Transistor Application :

SWITCHING

Published :

2015

Mounting Type :

Surface Mount

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

4.5nC @ 4.5V

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

4.8A Ta

Terminal Form :

Ball

Number of Terminations :

4

Factory Lead Time :

34 Weeks

Package / Case :

4-UFBGA, WLBGA

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

12V

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e1

Turn-Off Delay Time :

24 ns

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 6V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Turn On Delay Time :

3.3 ns

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.038Ohm