DMN1019UVT-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

JESD-30 Code :

R-PDSO-G6

Drain to Source Voltage (Vdss) :

12V

Pulsed Drain Current-Max (IDM) :

70A

Factory Lead Time :

15 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

6

Published :

2015

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

10m Ω @ 9.7A, 4.5V

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

800mV @ 250μA

Drain-source On Resistance-Max :

0.01Ohm

Input Capacitance (Ciss) (Max) @ Vds :

2588pF @ 10V

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±8V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

10.7A Ta

DS Breakdown Voltage-Min :

12V

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

Matte Tin (Sn)

Terminal Position :

Dual

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Gate Charge (Qg) (Max) @ Vgs :

50.4nC @ 8V

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

1.73W Ta

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 4.5V

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

4.7 mJ

FET Type :

N-Channel

Continuous Drain Current (ID) :

10.7A

Transistor Element Material :

SILICON