DMN1019USN-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

9.3A

Power Dissipation-Max :

680mW Ta

Capacitance :

2.426nF

Published :

2014

Package / Case :

TO-236-3, SC-59, SOT-23-3

Weight :

7.994566mg

Drain to Source Breakdown Voltage :

12V

Turn On Delay Time :

7.6 ns

Gate to Source Voltage (Vgs) :

4.5V

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 2.5V

Turn-Off Delay Time :

22.2 ns

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

10m Ω @ 9.7A, 4.5V

Mount :

Surface Mount

Number of Channels :

1

Vgs (Max) :

±8V

Current - Continuous Drain (Id) @ 25°C :

9.3A Ta

JESD-30 Code :

R-PDSO-G3

Terminal Finish :

Matte Tin (Sn)

Fall Time (Typ) :

16.8 ns

Transistor Application :

SWITCHING

Factory Lead Time :

16 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Dual

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Number of Elements :

1

Rise Time :

57.6ns

Input Capacitance (Ciss) (Max) @ Vds :

2426pF @ 10V

ECCN Code :

EAR99

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

800mV @ 250μA

FET Type :

N-Channel

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

50.6nC @ 8V