DMJ70H1D4SV3

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

342pF @ 50V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

700V

Surface Mount :

No

Reach Compliance Code :

not_compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Pulsed Drain Current-Max (IDM) :

6A

Vgs (Max) :

±30V

Factory Lead Time :

9 Weeks

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 1A, 10V

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

5A Tc

JESD-30 Code :

R-PSIP-T3

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 10V

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

5A

Package / Case :

TO-251-3 Stub Leads, IPak

Terminal Finish :

Matte Tin (Sn)

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

7.5 mJ

Drain to Source Voltage (Vdss) :

700V

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

78W Tc

Number of Elements :

1

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

Not Applicable