DMJ70H1D0SV3

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

7.5 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Reach Compliance Code :

not_compliant

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Surface Mount :

No

JESD-30 Code :

R-PSIP-T3

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

1 Ω @ 1.5A, 10V

Terminal Finish :

Matte Tin (Sn)

Power Dissipation-Max :

104W Tc

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Packaging :

Tube

Drain Current-Max (Abs) (ID) :

6A

Number of Terminations :

3

DS Breakdown Voltage-Min :

700V

Drain to Source Voltage (Vdss) :

700V

Moisture Sensitivity Level (MSL) :

Not Applicable

Input Capacitance (Ciss) (Max) @ Vds :

420pF @ 50V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

8A

Vgs (Max) :

±30V

Factory Lead Time :

9 Weeks

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-251-3 Stub Leads, IPak

Drain-source On Resistance-Max :

1Ohm

Gate Charge (Qg) (Max) @ Vgs :

12.8nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA