DMJ70H601SV3

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Number of Terminations :

3

Power Dissipation-Max :

125W Tc

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

not_compliant

Rds On (Max) @ Id, Vgs :

600m Ω @ 2.1A, 10V

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSIP-T3

Moisture Sensitivity Level (MSL) :

Not Applicable

DS Breakdown Voltage-Min :

700V

Number of Elements :

1

Mounting Type :

Through Hole

Terminal Finish :

Matte Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Avalanche Energy Rating (Eas) :

86 mJ

Drain to Source Voltage (Vdss) :

700V

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

686pF @ 50V

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

20.9nC @ 10V

FET Type :

N-Channel

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

No

Drain-source On Resistance-Max :

0.6Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

15A

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

8A

Package / Case :

TO-251-3 Stub Leads, IPak

Factory Lead Time :

9 Weeks

RoHS Status :

ROHS3 Compliant