DMG964H30R

Manufacturer :

Panasonic

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Factory Lead Time :

10 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Polarity :

NPN, PNP

Max Breakdown Voltage :

50V

Max Power Dissipation :

125mW

Transistor Application :

SWITCHING

Collector Emitter Breakdown Voltage :

50V

Resistor - Emitter Base (R2) :

47k Ω, 10k Ω

Packaging :

Tape and Reel (TR)

Resistor - Base (R1) :

47k Ω, 1k Ω

Length :

1.6mm

Base Part Number :

DMG964

RoHS Status :

RoHS Compliant

Number of Elements :

2

Max Operating Temperature :

150°C

Vce Saturation (Max) @ Ib, Ic :

250mV @ 500µA, 10mA

Height :

500μm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

Unknown

Package / Case :

SOT-563, SOT-666

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Number of Pins :

6

Current - Collector Cutoff (Max) :

500nA

Collector Emitter Voltage (VCEO) :

250mV

Number of Terminations :

6

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Max Collector Current :

100mA

Continuous Collector Current :

-100mA

Width :

1.2mm

HTS Code :

8541.21.00.95

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V / 30 @ 5mA 10V

ECCN Code :

EAR99

Terminal Form :

Flat

Additional Feature :

BUILT IN BIAS RESISITANCE RATIO 1

Element Configuration :

Dual

Mount :

Surface Mount