DMG8822UTS-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

841pF @ 10V

Terminal Form :

Gull wing

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Number of Pins :

8

Published :

2009

Lead Free :

Lead Free

Factory Lead Time :

20 Weeks

Operating Mode :

ENHANCEMENT MODE

FET Type :

2 N-Channel (Dual) Common Drain

Rise Time :

21.1ns

Fall Time (Typ) :

10.1 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Additional Feature :

High Reliability

Radiation Hardening :

No

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Series :

Automotive, AEC-Q101

Continuous Drain Current (ID) :

4.9A

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

9.6nC @ 4.5V

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Terminal Finish :

Matte Tin (Sn)

Drain to Source Breakdown Voltage :

20V

Mount :

Surface Mount

Turn On Delay Time :

7.8 ns

Pin Count :

8

Rds On (Max) @ Id, Vgs :

25m Ω @ 8.2A, 4.5V

Number of Channels :

2

Turn-Off Delay Time :

38.6 ns

Operating Temperature :

-55°C~150°C TJ

FET Feature :

Standard

Max Power Dissipation :

870mW

Current - Continuous Drain (Id) @ 25°C :

4.9A Ta

Vgs(th) (Max) @ Id :

900mV @ 250μA

Pbfree Code :

yes

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Number of Elements :

2

Number of Terminations :

8

Gate to Source Voltage (Vgs) :

8V