DMG8N65SCT

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

125W Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Package / Case :

TO-220-3

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Vgs (Max) :

±30V

FET Type :

N-Channel

Series :

Automotive, AEC-Q101

Drain to Source Voltage (Vdss) :

650V

Input Capacitance (Ciss) (Max) @ Vds :

1217pF @ 25V

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Factory Lead Time :

6 Weeks

Rds On (Max) @ Id, Vgs :

1.3 Ω @ 4A, 10V

Reach Compliance Code :

not_compliant

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Terminal Finish :

Matte Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99