DMG564H30R

Manufacturer :

Panasonic

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Max Collector Current :

100mA

Current - Collector Cutoff (Max) :

500nA

Max Power Dissipation :

150mW

Max Operating Temperature :

150°C

Resistor - Emitter Base (R2) :

47k Ω, 10k Ω

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Width :

1.25mm

Mounting Type :

Surface Mount

Additional Feature :

BUILT IN BIAS RESISITANCE RATIO 10

Base Part Number :

DMG564

Reach Compliance Code :

Unknown

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

250mV @ 500µA, 10mA

Mount :

Surface Mount

Factory Lead Time :

10 Weeks

Number of Pins :

6

Number of Elements :

2

Collector Emitter Breakdown Voltage :

50V

Package / Case :

6-SMD, Flat Leads

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Continuous Collector Current :

-100mA

Published :

2010

Packaging :

Tape and Reel (TR)

HTS Code :

8541.21.00.95

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V / 30 @ 5mA 10V

Max Breakdown Voltage :

50V

Polarity :

NPN, PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

600μm

Number of Terminations :

6

Length :

2mm

Transistor Element Material :

SILICON

Resistor - Base (R1) :

47k Ω, 1k Ω

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Collector Emitter Saturation Voltage :

250mV

RoHS Status :

RoHS Compliant

Collector Emitter Voltage (VCEO) :

250mV

Element Configuration :

Dual