DMG4N65CT

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

No

Fall Time (Typ) :

16 ns

Continuous Drain Current (ID) :

4A

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

30V

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

FET Type :

N-Channel

Vgs (Max) :

±30V

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

JEDEC-95 Code :

TO-220AB

Length :

10.7mm

Drain Current-Max (Abs) (ID) :

4A

Transistor Application :

SWITCHING

Mount :

Through Hole

Power Dissipation-Max :

2.19W Ta

Rds On (Max) @ Id, Vgs :

3 Ω @ 2A, 10V

Drain to Source Voltage (Vdss) :

650V

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

High Reliability

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Turn-Off Delay Time :

40 ns

Number of Pins :

3

DS Breakdown Voltage-Min :

650V

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

13.5nC @ 10V

Turn On Delay Time :

15.1 ns

REACH SVHC :

No SVHC

Mounting Type :

Through Hole

Packaging :

Tube

Drain-source On Resistance-Max :

3Ohm

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 25V

Pulsed Drain Current-Max (IDM) :

6A

Published :

2012

Width :

4.85mm

Avalanche Energy Rating (Eas) :

456 mJ

Number of Terminations :

3

Height :

16.5mm

Radiation Hardening :

No

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

5V @ 250μA

Package / Case :

TO-220-3

Rise Time :

13.8ns

Weight :

2.299997g