DMC1029UFDB-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

N and P-Channel

Transistor Application :

SWITCHING

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e4

Current - Continuous Drain (Id) @ 25°C :

5.6A 3.8A

Continuous Drain Current (ID) :

3.8A

Drain Current-Max (Abs) (ID) :

5.6A

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.029Ohm

Gate Charge (Qg) (Max) @ Vgs :

19.6nC @ 8V

Number of Elements :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

Standard

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

29m Ω @ 5A, 4.5V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

12V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

12V

Terminal Form :

NO LEAD

ECCN Code :

EAR99

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

1.4W

Input Capacitance (Ciss) (Max) @ Vds :

914pF @ 6V

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

1V @ 250μA

Factory Lead Time :

15 Weeks

Package / Case :

6-UDFN Exposed Pad

Published :

2015

JESD-30 Code :

S-PDSO-N6

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Transistor Element Material :

SILICON

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Number of Terminations :

6