DMC1028UFDB-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Voltage (Vdss) :

12V 20V

Max Power Dissipation :

1.36W

Gate Charge (Qg) (Max) @ Vgs :

18.5nC @ 8V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Mount :

Surface Mount

Factory Lead Time :

15 Weeks

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

ECCN Code :

EAR99

Published :

2015

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Vgs(th) (Max) @ Id :

1V @ 250μA

JESD-30 Code :

S-PDSO-N6

Current - Continuous Drain (Id) @ 25°C :

6A 3.4A

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

25m Ω @ 5.2A, 4.5V

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

12V

FET Type :

N and P-Channel

FET Feature :

Standard

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.025Ohm

Number of Terminations :

6

Package / Case :

6-UDFN Exposed Pad

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

NO LEAD

JESD-609 Code :

e4

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Number of Elements :

2

Continuous Drain Current (ID) :

3.4A

Input Capacitance (Ciss) (Max) @ Vds :

787pF @ 6V

Operating Temperature :

-55°C~150°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain Current-Max (Abs) (ID) :

6A