DF900R12IP4DVBOSA1

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Mfr.Part #
DF900R12IP4DVBOSA1
Manufacturer
Infineon Technologies
Package / Case
Module
Datasheet
Download
Description
IGBT MOD 1200V 900A 5100W
Stock
6
In Stock :
6

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Modules
Mounting Type :
Chassis Mount
Number of Terminations :
10
ECCN Code :
EAR99
Terminal Position :
UPPER
Surface Mount :
No
Lead Free :
Contains Lead
Terminal Form :
UNSPECIFIED
Transistor Application :
GENERAL PURPOSE
Turn On Time :
370 ns
Power - Max :
5100W
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Halogen Free :
Not Halogen Free
Number of Elements :
1
NTC Thermistor :
yes
Factory Lead Time :
50 Weeks
Input :
Standard
Transistor Element Material :
SILICON
Input Capacitance (Cies) @ Vce :
54nF @ 25V
Current - Collector (Ic) (Max) :
900A
Current - Collector Cutoff (Max) :
5mA
Published :
2002
Additional Feature :
UL APPROVED
RoHS Status :
Non-RoHS Compliant
JESD-30 Code :
R-PUFM-X10
Case Connection :
Isolated
Polarity/Channel Type :
N-Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
IGBT Type :
Trench Field Stop
Turn Off Time-Nom (toff) :
1300 ns
Voltage - Collector Emitter Breakdown (Max) :
1200V
Package / Case :
Module
Vce(on) (Max) @ Vge, Ic :
2.05V @ 15V, 900A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-40°C~150°C
Configuration :
Single Chopper
Introducing Transistors - IGBTs - Modules Infineon Technologies DF900R12IP4DVBOSA1 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Chassis Mount, Number of Terminations:10, Package / Case:Module, Operating Temperature:-40°C~150°C, DF900R12IP4DVBOSA1 pinout, DF900R12IP4DVBOSA1 datasheet PDF, DF900R12IP4DVBOSA1 amp .Beyond Transistors - IGBTs - Modules Infineon Technologies DF900R12IP4DVBOSA1 ,we also offer FS450R12KE3BOSA1, VS-GT80DA120U, FD450R12KE4PHOSA1, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies DF900R12IP4DVBOSA1


DF900R12IP4DVBOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at

DF900R12IP4DVBOSA1 Description


The DF900R12IP4DVBOSA1 is a PrimePACK?2 module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode. An IGBT power module can be used to switch electrical power on and off very quickly and with a high level of energy efficiency. Because it can improve switching, temperature, weight, and cost performance, the IGBT power module is quickly replacing other devices in high power applications. 



DF900R12IP4DVBOSA1 Features


  • Electrical Features

  • High Short Circuit Capability, Self Limiting Short Circuit Current

  • Low VCEsat

  • VCEsat with positive Temperature Coefficient

  • Extended Operation Temperature Tvjop

  • High DC Stability

  • Mechanical Features

  • High Creepage and Clearance Distances

  • High Power and Thermal Cycling Capability

  • High Power Density

  • Substrate for Low Thermal Resistance

  • 4kV AC 1min Insulation

  • Package with CTI>400



DF900R12IP4DVBOSA1 Applications


  • Commercial Agriculture Vehicles

  • As a switch

  • Switch electrical power

  • Electric cars

  • Appliance


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