DF600R12IP4DBOSA1

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Mfr.Part #
DF600R12IP4DBOSA1
Manufacturer
Infineon Technologies
Package / Case
Module
Datasheet
Download
Description
IGBT MOD 1200V 600A 3350W
Stock
6
In Stock :
6

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Modules
RoHS Status :
ROHS3 Compliant
Published :
2002
Number of Pins :
10
Input Capacitance (Cies) @ Vce :
37nF @ 25V
Operating Temperature :
-40°C~150°C
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Element Material :
SILICON
Mounting Type :
Chassis Mount
Lead Free :
Contains Lead
Package / Case :
Module
Series :
PrimePack™2
Power - Max :
3350W
Transistor Application :
POWER CONTROL
Pin Count :
8
Current - Collector Cutoff (Max) :
5mA
Number of Terminations :
8
NTC Thermistor :
yes
Terminal Position :
UPPER
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
IGBT Type :
Trench Field Stop
Input :
Standard
Terminal Form :
UNSPECIFIED
Max Collector Current :
600A
Voltage - Collector Emitter Breakdown (Max) :
1200V
Turn Off Time-Nom (toff) :
1350 ns
ECCN Code :
EAR99
Case Connection :
Isolated
Polarity/Channel Type :
N-Channel
Configuration :
Single
Number of Elements :
1
Mount :
Screw
Qualification Status :
Not Qualified
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Halogen Free :
Not Halogen Free
Collector Emitter Voltage (VCEO) :
1.2kV
Turn On Time :
370 ns
Factory Lead Time :
14 Weeks
JESD-30 Code :
R-XUFM-X8
Pbfree Code :
No
Vce(on) (Max) @ Vge, Ic :
2.05V @ 15V, 600A
Datasheets
DF600R12IP4DBOSA1
Introducing Transistors - IGBTs - Modules Infineon Technologies DF600R12IP4DBOSA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:10, Operating Temperature:-40°C~150°C, Mounting Type:Chassis Mount, Package / Case:Module, Number of Terminations:8, DF600R12IP4DBOSA1 pinout, DF600R12IP4DBOSA1 datasheet PDF, DF600R12IP4DBOSA1 amp .Beyond Transistors - IGBTs - Modules Infineon Technologies DF600R12IP4DBOSA1 ,we also offer FS450R12KE3BOSA1, VS-GT80DA120U, FD450R12KE4PHOSA1, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies DF600R12IP4DBOSA1


DF600R12IP4DBOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at

DF600R12IP4DBOSA1 Description


DF600R12IP4DBOSA1 is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 1200V from Infineon Technologies. DF600R12IP4DBOSA1 operates between -40°C~150°C, and its Current - Collector Cutoff (Max) is 600A. The DF600R12IP4DBOSA1 has 10 pins and it is available in Module packaging way. DF600R12IP4DBOSA1 has a 1200V Voltage - Collector Emitter Breakdown (Max) value.



DF600R12IP4DBOSA1 Features


  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A

  • Input Capacitance (Cies) @ Vce: 37nF @ 25V

  • Current - Collector Cutoff (Max): 5mA

  • Voltage - Collector Emitter Breakdown (Max): 1200V

  • Operating Temperature: -40°C~150°C



DF600R12IP4DBOSA1 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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