DDTA114ECA-7-F

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Collector Emitter Breakdown Voltage :

50V

Transistor Type :

PNP - Pre-Biased

Emitter Base Voltage (VEBO) :

-3V

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Frequency - Transition :

250MHz

Peak Reflow Temperature (Cel) :

260

Base Part Number :

DDTA114

Terminal Form :

Gull wing

Height :

1mm

JESD-609 Code :

e3

Pin Count :

3

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Width :

1.4mm

Element Configuration :

Single

Max Power Dissipation :

200mW

Number of Terminations :

3

Pbfree Code :

yes

Max Operating Temperature :

150°C

Polarity :

PNP

Weight :

7.994566mg

Terminal Position :

Dual

Collector Emitter Voltage (VCEO) :

300mV

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Current - Collector Cutoff (Max) :

500nA

Min Operating Temperature :

-55°C

Number of Pins :

3

Max Breakdown Voltage :

50V

Resistor - Emitter Base (R2) :

10 k Ω

Mount :

Surface Mount

Factory Lead Time :

19 Weeks

Published :

2017

Number of Elements :

1

Voltage - Rated DC :

-50V

hFE Min :

30

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Tape and Reel (TR)

Continuous Collector Current :

-100mA

Transition Frequency :

250MHz

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

ECCN Code :

EAR99

Length :

3.05mm

Radiation Hardening :

No

Max Collector Current :

100mA

Time@Peak Reflow Temperature-Max (s) :

40

Resistor - Base (R1) :

10 k Ω

Current Rating :

-50mA

HTS Code :

8541.21.00.75