DDTA113TE-7-F

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Max Breakdown Voltage :

50V

Terminal Finish :

Matte Tin (Sn)

Transistor Type :

PNP - Pre-Biased

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

40

Height :

750μm

Frequency - Transition :

250MHz

Max Operating Temperature :

150°C

Resistor - Base (R1) :

1 k Ω

Mounting Type :

Surface Mount

Terminal Position :

Dual

Mount :

Surface Mount

Min Operating Temperature :

-55°C

Current Rating :

-100mA

Max Power Dissipation :

150mW

Packaging :

Tape and Reel (TR)

Base Part Number :

DDTA113

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V

Factory Lead Time :

18 Weeks

Collector Emitter Breakdown Voltage :

50V

Polarity :

PNP

Continuous Collector Current :

100mA

Collector Emitter Voltage (VCEO) :

50V

Number of Pins :

3

JESD-609 Code :

e3

Current - Collector Cutoff (Max) :

500nA ICBO

Package / Case :

SOT-523

ECCN Code :

EAR99

Width :

800μm

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Max Collector Current :

100mA

HTS Code :

8541.21.00.75

Pin Count :

3

Element Configuration :

Single

Pbfree Code :

yes

Vce Saturation (Max) @ Ib, Ic :

300mV @ 1mA, 10mA

Transition Frequency :

250MHz

Additional Feature :

BUILT IN BIAS RESISTOR

hFE Min :

100

Number of Elements :

1

Length :

1.6mm

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Terminal Form :

Gull wing

Voltage - Rated DC :

-50V

Weight :

2.012816mg

Published :

2007