DDC123JH-7
- Mfr.Part #
- DDC123JH-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- TRANS 2NPN PREBIAS 0.15W SOT563
- Stock
- 8
- In Stock :
- 8
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Transition Frequency :
- 250MHz
- Continuous Collector Current :
- 100mA
- Packaging :
- Tape and Reel (TR)
- Weight :
- 3.005049mg
- Mount :
- Surface Mount
- Pbfree Code :
- yes
- Width :
- 1.2mm
- Collector Emitter Voltage (VCEO) :
- 300mV
- Number of Pins :
- 6
- ECCN Code :
- EAR99
- Resistor - Emitter Base (R2) :
- 47k Ω
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 250µA, 5mA
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 500nA
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 50V
- Terminal Finish :
- Matte Tin (Sn)
- Number of Elements :
- 2
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Transistor Type :
- 2 NPN - Pre-Biased (Dual)
- Max Breakdown Voltage :
- 50V
- Polarity :
- NPN
- Base Part Number :
- DDC123
- Frequency - Transition :
- 250MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Min Operating Temperature :
- -55°C
- Published :
- 2004
- Element Configuration :
- Dual
- Factory Lead Time :
- 19 Weeks
- Height :
- 600μm
- Max Power Dissipation :
- 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 10mA 5V
- Max Operating Temperature :
- 150°C
- Resistor - Base (R1) :
- 2.2k Ω
- Pin Count :
- 6
- Number of Terminations :
- 6
- Terminal Form :
- Flat
- Max Collector Current :
- 100mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- HTS Code :
- 8541.21.00.75
- Package / Case :
- SOT-563, SOT-666
- Peak Reflow Temperature (Cel) :
- 260
- hFE Min :
- 80
- Length :
- 1.6mm
- Datasheets
- DDC123JH-7

DDC123JH-7 datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from Diodes Incorporated stock available at
The Diodes Inc. DDC123JH-7 is a pre-biased 2NPN bipolar junction transistor (BJT) array in a SOT563 package. It has a maximum power dissipation of 0.15W and is designed for use in a wide range of applications.
Features:
• Pre-biased 2NPN bipolar junction transistor (BJT) array
• Maximum power dissipation of 0.15W
• SOT563 package
• Low noise
• High gain
• High frequency operation
• Low power consumption
• High reliability
Applications:
The Diodes Inc. DDC123JH-7 is suitable for use in a wide range of applications, including:
• Automotive electronics
• Industrial control systems
• Telecommunications
• Consumer electronics
• Medical devices
• Power management systems
• Lighting systems
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