DDB6U75N16W1RBOMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Modules

Transistor Element Material :

SILICON

Element Configuration :

Single

RoHS Status :

RoHS Compliant

Width :

33.8mm

Published :

2006

Case Connection :

Isolated

Turn Off Time-Nom (toff) :

630 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn On Time :

137 ns

Configuration :

Three Phase Inverter

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

27

Mount :

PCB, Through Hole

Input Capacitance (Cies) @ Vce :

2.8nF @ 25V

Height :

12mm

Terminal Form :

UNSPECIFIED

Input :

Standard

Number of Pins :

10

NTC Thermistor :

yes

Transistor Application :

POWER CONTROL

Collector Emitter Voltage (VCEO) :

1.2kV

Pbfree Code :

No

ECCN Code :

EAR99

Halogen Free :

Not Halogen Free

Pin Count :

27

Forward Current :

65A

Lead Free :

Contains Lead

Operating Temperature :

-40°C~150°C

Qualification Status :

Not Qualified

Max Repetitive Reverse Voltage (Vrrm) :

1.6kV

JESD-30 Code :

R-XUFM-X27

Mounting Type :

Chassis Mount

Package / Case :

Module

Peak Reverse Current :

1mA

Length :

48mm

Number of Elements :

1

Max Collector Current :

69A

Contact Plating :

Tin

Vce(on) (Max) @ Vge, Ic :

2.15V @ 15V, 50A

Factory Lead Time :

16 Weeks

Voltage - Collector Emitter Breakdown (Max) :

1200V

Terminal Position :

UPPER

Power - Max :

335W

Polarity/Channel Type :

N-Channel