DDB6U180N16RRB11BPSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Modules

Voltage - Collector Emitter Breakdown (Max) :

1200V

Max Repetitive Reverse Voltage (Vrrm) :

1.6kV

Polarity/Channel Type :

N-Channel

Factory Lead Time :

16 Weeks

Transistor Element Material :

SILICON

Configuration :

3 Independent

Current - Collector (Ic) (Max) :

140A

Surface Mount :

No

Lead Free :

Contains Lead

Operating Temperature :

-40°C~150°C

Terminal Form :

UNSPECIFIED

Terminal Position :

UPPER

Current - Collector Cutoff (Max) :

1mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Halogen Free :

Not Halogen Free

Case Connection :

Isolated

Published :

2006

Power - Max :

515W

Vce(on) (Max) @ Vge, Ic :

2.2V @ 15V, 100A

Number of Elements :

1

Turn Off Time-Nom (toff) :

620 ns

Input :

Standard

Input Capacitance (Cies) @ Vce :

6.3nF @ 25V

Turn On Time :

210 ns

IGBT Type :

Trench Field Stop

Mounting Type :

Chassis Mount

Additional Feature :

UL RECOGNIZED

ECCN Code :

EAR99

JESD-30 Code :

R-XUFM-X26

Package / Case :

Module

NTC Thermistor :

No

RoHS Status :

Non-RoHS Compliant

Number of Terminations :

26

Transistor Application :

POWER CONTROL