DCX69-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Element Material :

SILICON

Power Dissipation :

1W

Mount :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

85 @ 500mA 1V

REACH SVHC :

No SVHC

Length :

4.5mm

Height :

1.5mm

Max Collector Current :

1A

Radiation Hardening :

No

Frequency :

200MHz

Number of Elements :

1

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn)

JESD-609 Code :

e3

Weight :

51.993025mg

Transistor Type :

PNP

Emitter Base Voltage (VEBO) :

-5V

Transistor Application :

SWITCHING

Gain Bandwidth Product :

200MHz

Factory Lead Time :

19 Weeks

Pin Count :

3

Max Power Dissipation :

1W

JESD-30 Code :

R-PSSO-F3

Element Configuration :

Single

Terminal Form :

Flat

Vce Saturation (Max) @ Ib, Ic :

500mV @ 100mA, 1A

Package / Case :

TO-243AA

Transition Frequency :

200MHz

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Max Breakdown Voltage :

20V

Base Part Number :

DCX69

Number of Pins :

4

Collector Emitter Breakdown Voltage :

20V

Operating Temperature :

-55°C~150°C TJ

Published :

2012

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Width :

2.48mm

Polarity :

NPN, PNP

Collector Emitter Saturation Voltage :

-500mV

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

20V

Collector Base Voltage (VCBO) :

25V

Pbfree Code :

yes

Case Connection :

COLLECTOR

Current - Collector Cutoff (Max) :

100nA ICBO