DCX68-13
- Mfr.Part #
- DCX68-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 20V 1A SOT89-3
- Stock
- 32,234
- In Stock :
- 32,234
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 1A
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 500mA 1V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Weight :
- 51.993025mg
- Max Power Dissipation :
- 1W
- Mount :
- Surface Mount
- Terminal Finish :
- Matte Tin (Sn)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- JESD-609 Code :
- e3
- Package / Case :
- TO-243AA
- Width :
- 2.5mm
- Collector Emitter Breakdown Voltage :
- 20V
- Published :
- 2008
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Collector Base Voltage (VCBO) :
- 25V
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 19 Weeks
- Pin Count :
- 3
- REACH SVHC :
- No SVHC
- Transition Frequency :
- 330MHz
- Base Part Number :
- DCX68
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Transistor Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 4
- Case Connection :
- COLLECTOR
- Gain Bandwidth Product :
- 330MHz
- Terminal Form :
- Flat
- Frequency :
- 300MHz
- Collector Emitter Voltage (VCEO) :
- 20V
- Element Configuration :
- Single
- Height :
- 1.5mm
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 500mV
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 1W
- Number of Terminations :
- 3
- JESD-30 Code :
- R-PSSO-F3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 20V
- Length :
- 4.5mm
- Radiation Hardening :
- No
- Datasheets
- DCX68-13
DCX68-13 Documents

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
DCX68-13 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 85 @ 500mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 100mA, 1A.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 330MHz.The breakdown input voltage is 20V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
DCX68-13 Features
the DC current gain for this device is 85 @ 500mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 330MHz
DCX68-13 Applications
There are a lot of Diodes Incorporated
DCX68-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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