DCP56-16-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Packaging :

Tape and Reel (TR)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 2V

Length :

6.7mm

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Saturation Voltage :

500mV

JESD-609 Code :

e3

Case Connection :

COLLECTOR

Mount :

Surface Mount

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

40

Number of Pins :

4

Transistor Application :

SWITCHING

Gain Bandwidth Product :

200MHz

Number of Elements :

1

Max Power Dissipation :

1W

Package / Case :

TO-261-4, TO-261AA

Transistor Type :

NPN

Emitter Base Voltage (VEBO) :

5V

Width :

3.7mm

Height :

1.65mm

Radiation Hardening :

No

Max Collector Current :

1A

Continuous Collector Current :

1A

ECCN Code :

EAR99

Frequency :

200MHz

Transistor Element Material :

SILICON

Max Breakdown Voltage :

80V

Pbfree Code :

yes

Pin Count :

4

Terminal Form :

Gull wing

Published :

2011

Polarity/Channel Type :

NPN

Element Configuration :

Single

Number of Terminations :

4

Transition Frequency :

200MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

7.994566mg

hFE Min :

25

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Power Dissipation :

1W

Terminal Finish :

Matte Tin (Sn)

Collector Emitter Voltage (VCEO) :

80V

Collector Emitter Breakdown Voltage :

80V

Mounting Type :

Surface Mount

Collector Base Voltage (VCBO) :

100V

Current - Collector Cutoff (Max) :

100nA ICBO