DCP52-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Max Collector Current :

1A

Weight :

7.994566mg

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

hFE Min :

25

Length :

6.7mm

Continuous Collector Current :

-1A

Terminal Finish :

Matte Tin (Sn)

Packaging :

Cut Tape (CT)

Terminal Position :

Dual

Base Part Number :

DCP52

Power Dissipation :

2W

Time@Peak Reflow Temperature-Max (s) :

40

Emitter Base Voltage (VEBO) :

-5V

Mounting Type :

Surface Mount

Mount :

Surface Mount

Transition Frequency :

200MHz

Pin Count :

4

Peak Reflow Temperature (Cel) :

260

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 150mA 2V

ECCN Code :

EAR99

Polarity/Channel Type :

PNP

Collector Emitter Saturation Voltage :

-500mV

Width :

3.7mm

Case Connection :

COLLECTOR

Collector Emitter Breakdown Voltage :

60V

Transistor Application :

SWITCHING

Number of Terminations :

4

Max Breakdown Voltage :

60V

Transistor Type :

PNP

Pbfree Code :

yes

Max Power Dissipation :

2W

Height :

1.65mm

Frequency :

200MHz

Collector Emitter Voltage (VCEO) :

60V

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-261-4, TO-261AA

Current - Collector Cutoff (Max) :

100nA ICBO

Number of Pins :

4

Element Configuration :

Single

Published :

2011

Terminal Form :

Gull wing

Gain Bandwidth Product :

200MHz

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Collector Base Voltage (VCBO) :

60V

Factory Lead Time :

14 Weeks

Power - Max :

1W