D45C8
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- Mfr.Part #
- D45C8
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 4A TO220-3
- Stock
- 72,241
- In Stock ：
- 72,241
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2010
- Current - Collector Cutoff (Max) :
- 100μA
- RoHS Status :
- RoHS Compliant
- Number of Pins :
- 3
- Polarity/Channel Type :
- PNP
- Transistor Type :
- PNP
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- -60V
- REACH SVHC :
- No SVHC
- Max Frequency :
- 32MHz
- Transition Frequency :
- 32MHz
- Element Configuration :
- Single
- Package / Case :
- TO-220-3
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Frequency - Transition :
- 32MHz
- JEDEC-95 Code :
- TO-220AB
- Mounting Type :
- Through Hole
- Max Collector Current :
- 4A
- Length :
- 10.67mm
- Mount :
- Through Hole
- Factory Lead Time :
- 6 Weeks
- Packaging :
- Bulk
- Height :
- 16.51mm
- Contact Plating :
- Tin
- hFE Min :
- 40
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 60V
- Current Rating :
- -4A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 200mA 1V
- Transistor Application :
- AMPLIFIER
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 1A
- Collector Emitter Voltage (VCEO) :
- 60V
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 60W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- -60V
- Emitter Base Voltage (VEBO) :
- -1.3V
- Collector Emitter Saturation Voltage :
- -500mV
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 60W
- Weight :
- 1.8g
- Width :
- 4.83mm
- Lifecycle Status :
- OBSOLETE (Last Updated: 6 days ago)
- Datasheets
- D45C8
D45C8 Documents
PNP -55°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Bulk Through Hole
D45C8 Overview
This device has a DC current gain of 40 @ 200mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -500mV.A VCE saturation (Max) of 500mV @ 50mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -1.3V.This device has a current rating of -4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 32MHz.A maximum collector current of 4A volts is possible.
D45C8 Features
the DC current gain for this device is 40 @ 200mA 1V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 1A
the emitter base voltage is kept at -1.3V
the current rating of this device is -4A
a transition frequency of 32MHz
D45C8 Applications
There are a lot of ON Semiconductor
D45C8 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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