D45C8

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Mfr.Part #
D45C8
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS PNP 60V 4A TO220-3
Stock
72,241
In Stock :
72,241

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Published :
2010
Current - Collector Cutoff (Max) :
100μA
RoHS Status :
RoHS Compliant
Number of Pins :
3
Polarity/Channel Type :
PNP
Transistor Type :
PNP
Pbfree Code :
yes
Collector Base Voltage (VCBO) :
-60V
REACH SVHC :
No SVHC
Max Frequency :
32MHz
Transition Frequency :
32MHz
Element Configuration :
Single
Package / Case :
TO-220-3
JESD-609 Code :
e3
Number of Elements :
1
Operating Temperature :
-55°C~150°C TJ
Frequency - Transition :
32MHz
JEDEC-95 Code :
TO-220AB
Mounting Type :
Through Hole
Max Collector Current :
4A
Length :
10.67mm
Mount :
Through Hole
Factory Lead Time :
6 Weeks
Packaging :
Bulk
Height :
16.51mm
Contact Plating :
Tin
hFE Min :
40
Number of Terminations :
3
Collector Emitter Breakdown Voltage :
60V
Current Rating :
-4A
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 200mA 1V
Transistor Application :
AMPLIFIER
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 1A
Collector Emitter Voltage (VCEO) :
60V
Lead Free :
Lead Free
Max Power Dissipation :
60W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Voltage - Rated DC :
-60V
Emitter Base Voltage (VEBO) :
-1.3V
Collector Emitter Saturation Voltage :
-500mV
Transistor Element Material :
SILICON
Power Dissipation :
60W
Weight :
1.8g
Width :
4.83mm
Lifecycle Status :
OBSOLETE (Last Updated: 6 days ago)
Introducing Transistors - Bipolar (BJT) - Single onsemi D45C8 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-220-3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, D45C8 pinout, D45C8 datasheet PDF, D45C8 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi D45C8 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi D45C8


PNP -55°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Bulk Through Hole

D45C8 Overview


This device has a DC current gain of 40 @ 200mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -500mV.A VCE saturation (Max) of 500mV @ 50mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -1.3V.This device has a current rating of -4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 32MHz.A maximum collector current of 4A volts is possible.

D45C8 Features


the DC current gain for this device is 40 @ 200mA 1V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 1A
the emitter base voltage is kept at -1.3V
the current rating of this device is -4A
a transition frequency of 32MHz


D45C8 Applications


There are a lot of ON Semiconductor
D45C8 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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