D45C12G
- Mfr.Part #
- D45C12G
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 4A TO220
- Stock
- 1,134
- In Stock :
- 1,134
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 200mA 1V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 1A
- Current - Collector (Ic) (Max) :
- 4A
- Current - Collector Cutoff (Max) :
- 100nA
- Power - Max :
- 30W
- Frequency - Transition :
- 40MHz
- Transistor Type :
- PNP
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Package / Case :
- TO-220-3
- Supplier Device Package :
- TO-220AB
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- D45C12G

PNP -55°C~150°C TJ 100nA TO-220-3 Tube Through Hole
D45C12G Overview
DC current gain in this device equals 40 @ 200mA 1V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 1A.Product comes in TO-220AB supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
D45C12G Features
the DC current gain for this device is 40 @ 200mA 1V
the vce saturation(Max) is 500mV @ 50mA, 1A
the supplier device package of TO-220AB
D45C12G Applications
There are a lot of Rochester Electronics, LLC
D45C12G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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