D45C12G

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Mfr.Part #
D45C12G
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS PNP 80V 4A TO220
Stock
1,134
In Stock :
1,134

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 200mA 1V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tube
Mounting Type :
Through Hole
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 1A
Current - Collector (Ic) (Max) :
4A
Current - Collector Cutoff (Max) :
100nA
Power - Max :
30W
Frequency - Transition :
40MHz
Transistor Type :
PNP
Voltage - Collector Emitter Breakdown (Max) :
80V
Package / Case :
TO-220-3
Supplier Device Package :
TO-220AB
RoHS Status :
ROHS3 Compliant
Datasheets
D45C12G
Introducing Transistors - Bipolar (BJT) - Single onsemi D45C12G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-220-3, D45C12G pinout, D45C12G datasheet PDF, D45C12G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi D45C12G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi D45C12G


PNP -55°C~150°C TJ 100nA TO-220-3 Tube Through Hole

D45C12G Overview


DC current gain in this device equals 40 @ 200mA 1V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 1A.Product comes in TO-220AB supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

D45C12G Features


the DC current gain for this device is 40 @ 200mA 1V
the vce saturation(Max) is 500mV @ 50mA, 1A
the supplier device package of TO-220AB


D45C12G Applications


There are a lot of Rochester Electronics, LLC
D45C12G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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