CZT5551E TR

Manufacturer :

Central Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 10mA 5V

Transistor Type :

NPN

Transition Frequency :

100MHz

Transistor Element Material :

SILICON

Power - Max :

2W

Operating Temperature :

-65°C~150°C TJ

Voltage - Collector Emitter Breakdown (Max) :

220V

JESD-30 Code :

R-PDSO-G4

Polarity/Channel Type :

NPN

Time@Peak Reflow Temperature-Max (s) :

10

Power Dissipation-Max (Abs) :

2W

RoHS Status :

ROHS3 Compliant

Frequency - Transition :

300MHz

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

50nA

Vce Saturation (Max) @ Ib, Ic :

100mV @ 5mA, 50mA

Case Connection :

COLLECTOR

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Pin Count :

4

Current - Collector (Ic) (Max) :

600mA

Number of Terminations :

4

Terminal Position :

Dual

Transistor Application :

SWITCHING

HTS Code :

8541.29.00.75

Surface Mount :

yes

Published :

2016

Terminal Form :

Gull wing

Qualification Status :

Not Qualified

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

JESD-609 Code :

e3

Package / Case :

TO-261-4, TO-261AA

Configuration :

Single