CZT5551E TR

Manufacturer :

Central Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single

Power Dissipation-Max (Abs) :

2W

Power - Max :

2W

Current - Collector (Ic) (Max) :

600mA

Vce Saturation (Max) @ Ib, Ic :

100mV @ 5mA, 50mA

Case Connection :

COLLECTOR

Polarity/Channel Type :

NPN

Package / Case :

TO-261-4, TO-261AA

Voltage - Collector Emitter Breakdown (Max) :

220V

Transistor Application :

SWITCHING

Number of Elements :

1

Transition Frequency :

100MHz

Pin Count :

4

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 10mA 5V

Terminal Finish :

Matte Tin (Sn)

Surface Mount :

yes

JESD-30 Code :

R-PDSO-G4

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Number of Terminations :

4

HTS Code :

8541.29.00.75

Terminal Position :

Dual

Transistor Element Material :

SILICON

Operating Temperature :

-65°C~150°C TJ

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

50nA

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

10

Published :

2016

Configuration :

Single

ECCN Code :

EAR99

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Transistor Type :

NPN

Frequency - Transition :

300MHz