CZT5551E BK
- Mfr.Part #
- CZT5551E BK
- Manufacturer
- Central Semiconductor
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 220V 0.6A SOT223
- Stock
- 13,212
- In Stock :
- 13,212
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- Manufacturer :
- Central Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 50nA
- Terminal Form :
- Gull wing
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Case Connection :
- COLLECTOR
- Transistor Application :
- SWITCHING
- HTS Code :
- 8541.29.00.75
- Transistor Type :
- NPN
- Frequency - Transition :
- 300MHz
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Surface Mount
- Current - Collector (Ic) (Max) :
- 600mA
- JESD-609 Code :
- e3
- Packaging :
- Bulk
- Transition Frequency :
- 100MHz
- Power - Max :
- 2W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Published :
- 2016
- Power Dissipation-Max (Abs) :
- 2W
- Terminal Position :
- Dual
- Number of Terminations :
- 4
- Package / Case :
- TO-261-4, TO-261AA
- Number of Elements :
- 1
- Voltage - Collector Emitter Breakdown (Max) :
- 220V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 10mA 5V
- Qualification Status :
- Not Qualified
- JESD-30 Code :
- R-PDSO-G4
- Surface Mount :
- yes
- Pin Count :
- 4
- Operating Temperature :
- -65°C~150°C TJ
- Terminal Finish :
- Matte Tin (Sn)
- Vce Saturation (Max) @ Ib, Ic :
- 100mV @ 5mA, 50mA
- Peak Reflow Temperature (Cel) :
- 260
- Configuration :
- Single
- Datasheets
- CZT5551E BK
NPN -65°C~150°C TJ 50nA 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Bulk Surface Mount
CZT5551E BK Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 10mA 5V.When VCE saturation is 100mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 100MHz.The device has a 220V maximal voltage - Collector Emitter Breakdown.
CZT5551E BK Features
the DC current gain for this device is 120 @ 10mA 5V
the vce saturation(Max) is 100mV @ 5mA, 50mA
a transition frequency of 100MHz
CZT5551E BK Applications
There are a lot of Central Semiconductor Corp
CZT5551E BK applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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