CYD09S36V18-200BBXI

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Mfr.Part #
CYD09S36V18-200BBXI
Manufacturer
Infineon Technologies
Package / Case
256-LBGA
Datasheet
Download
Description
IC SRAM 9MBIT PARALLEL 256FBGA
Stock
4,049
In Stock :
4,049

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Manufacturer :
Infineon Technologies
Product Category :
Memory
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Memory Format :
SRAM
Voltage - Supply :
1.42V~1.58V 1.7V~1.9V
Memory Density :
9437184 bit
Mounting Type :
Surface Mount
JESD-30 Code :
S-PBGA-B256
JESD-609 Code :
e1
Memory Width :
36
Qualification Status :
COMMERCIAL
Supply Voltage-Min (Vsup) :
1.42V
Memory Size :
9Mb 256K x 36
Number of Terminations :
256
Memory Interface :
Parallel
Organization :
256KX36
Length :
17mm
Terminal Finish :
TIN SILVER COPPER
Reach Compliance Code :
Unknown
Pbfree Code :
yes
Clock Frequency :
200MHz
Time@Peak Reflow Temperature-Max (s) :
20
Surface Mount :
yes
Operating Temperature :
-40°C~85°C TA
Memory Type :
Volatile
Peak Reflow Temperature (Cel) :
260
Supply Voltage-Max (Vsup) :
1.58V
Supply Voltage :
1.5V
Terminal Pitch :
1mm
Number of Functions :
1
Access Time :
3.3ns
Terminal Position :
BOTTOM
Additional Feature :
PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V
Height Seated (Max) :
1.7mm
Package / Case :
256-LBGA
RoHS Status :
ROHS3 Compliant
Packaging :
Tray
Width :
17mm
Pin Count :
256
Introducing Memory Infineon Technologies CYD09S36V18-200BBXI from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:256, Operating Temperature:-40°C~85°C TA, Package / Case:256-LBGA, CYD09S36V18-200BBXI pinout, CYD09S36V18-200BBXI datasheet PDF, CYD09S36V18-200BBXI amp .Beyond Memory Infineon Technologies CYD09S36V18-200BBXI ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies CYD09S36V18-200BBXI


Memory Infineon Technologies CYD09S36V18-200BBXI Overview

Infineon Technologies' CYD09S36V18-200BBXI is an advanced SRAM memory chip, designed to meet the high demands of contemporary digital systems. With a substantial 9Mbit storage capacity and a parallel interface, this component ensures rapid data access and high-speed operation. Encapsulated in a compact 256FBGA package, the CYD09S36V18-200BBXI provides a robust solution for applications requiring high density and minimal footprint. Its reliability and performance make it a prime choice for developers looking to enhance their system capabilities with Memory Infineon Technologies CYD09S36V18-200BBXI components.

CYD09S36V18-200BBXI Features

This IC SRAM from Infineon Technologies offers several key features that distinguish it in the market:

  • 9Mbit high-density storage capacity for extensive data handling.
  • Parallel interface for faster communication and throughput.
  • 256FBGA package ensures reduced space usage on PCBs while providing superior connectivity and thermal management.
  • Designed for high reliability and stable operation under various environmental conditions.

CYD09S36V18-200BBXI Applications

  • High-performance Computing: Utilized in servers and data centers where speed and reliability are crucial for handling large volumes of data efficiently.
  • Networking Equipment: Enhances data transmission devices such as routers and switches, improving cache functions and data throughput.
  • Industrial Automation: Applied in sophisticated industrial control systems requiring fast access to temporary data for real-time processing.
  • Automotive Electronics: Serves critical applications in automotive systems, supporting advanced driver-assistance systems (ADAS) and other in-vehicle networks.
  • Consumer Electronics: Ideal for high-end gaming consoles and home entertainment systems, where rapid access to graphic data and user settings is needed.
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Shipping Cost

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