CYD02S18V-133BBI

Manufacturer :

Infineon Technologies

Product Category :

Memory

Parallel/Serial :

Parallel

Product Status :

Active

Series :

-

Memory Type :

Volatile

Operating Temperature :

-40°C ~ 85°C (TA)

Pbfree Code :

No

Supply Voltage-Min (Vsup) :

1.7 V

Access Time :

4.7 ns

Memory Format :

SRAM

Terminal Finish :

TIN LEAD

Length :

17 mm

Package :

Bulk

Organization :

128KX18

Peak Reflow Temperature (Cel) :

225

Reach Compliance Code :

Unknown

Mounting Type :

Surface Mount

Manufacturer :

Rochester Electronics LLC

Supply Voltage-Max (Vsup) :

1.9 V

Memory Organization :

128K x 18

Terminal Position :

BOTTOM

Write Cycle Time - Word, Page :

-

Technology :

SRAM - Dual Port, Standard

JESD-30 Code :

S-PBGA-B256

Pin Count :

256

JESD-609 Code :

e0

Supplier Device Package :

256-FBGA (17x17)

Memory Interface :

Parallel

Number of Terminals :

256

Memory Density :

2359296 bit

RoHS :

Compliant

Clock Frequency :

133 MHz

Temperature Grade :

Industrial

Qualification Status :

COMMERCIAL

Surface Mount :

yes

Memory Width :

18

Terminal Form :

Ball

Additional Feature :

FLOW-THROUGH OR PIPELINED ARCHITECTURE

Memory IC Type :

DUAL-PORT SRAM

Package / Case :

256-LBGA

Package Shape :

Square

Memory Size :

2Mbit

Terminal Pitch :

1 mm

Operating Mode :

SYNCHRONOUS

Number of Functions :

1

Voltage - Supply :

1.7V ~ 1.9V

Seated Height-Max :

1.7 mm

Number of Words :

131072 words

Width :

17 mm