CYD02S18V-133BBI

Manufacturer :

Infineon Technologies

Product Category :

Memory

Memory Format :

SRAM

Terminal Finish :

TIN LEAD

Manufacturer :

Rochester Electronics LLC

Additional Feature :

FLOW-THROUGH OR PIPELINED ARCHITECTURE

RoHS :

Compliant

Seated Height-Max :

1.7 mm

Parallel/Serial :

Parallel

Qualification Status :

COMMERCIAL

Terminal Position :

BOTTOM

Access Time :

4.7 ns

Memory Type :

Volatile

Package Shape :

Square

Supplier Device Package :

256-FBGA (17x17)

Terminal Form :

Ball

Width :

17 mm

Temperature Grade :

Industrial

Terminal Pitch :

1 mm

Memory Size :

2Mbit

Pin Count :

256

Supply Voltage-Max (Vsup) :

1.9 V

Voltage - Supply :

1.7V ~ 1.9V

Supply Voltage-Min (Vsup) :

1.7 V

Number of Terminals :

256

Technology :

SRAM - Dual Port, Standard

Write Cycle Time - Word, Page :

-

Number of Functions :

1

Memory Density :

2359296 bit

Length :

17 mm

Pbfree Code :

No

Clock Frequency :

133 MHz

JESD-609 Code :

e0

Operating Temperature :

-40°C ~ 85°C (TA)

Series :

-

Mounting Type :

Surface Mount

Operating Mode :

SYNCHRONOUS

JESD-30 Code :

S-PBGA-B256

Surface Mount :

yes

Product Status :

Active

Package :

Bulk

Peak Reflow Temperature (Cel) :

225

Reach Compliance Code :

Unknown

Memory IC Type :

DUAL-PORT SRAM

Memory Interface :

Parallel

Package / Case :

256-LBGA

Number of Words :

131072 words

Memory Organization :

128K x 18

Memory Width :

18

Organization :

128KX18