CYD02S18V-133BBC

Manufacturer :

Infineon Technologies

Product Category :

Memory

Supply Voltage-Min (Vsup) :

1.7 V

JESD-609 Code :

e0

Package Shape :

Square

Memory Size :

2Mbit

Seated Height-Max :

1.7 mm

Supply Voltage-Max (Vsup) :

1.9 V

Technology :

SRAM - Dual Port, Standard

Width :

17 mm

Supplier Device Package :

256-FBGA (17x17)

Memory Interface :

Parallel

Memory Organization :

128K x 18

Temperature Grade :

COMMERCIAL

Package / Case :

256-LBGA

Number of Functions :

1

Parallel/Serial :

Parallel

Memory Density :

2359296 bit

Memory Format :

SRAM

Write Cycle Time - Word, Page :

-

Terminal Finish :

TIN LEAD

Mounting Type :

Surface Mount

Terminal Pitch :

1 mm

Terminal Form :

Ball

Operating Mode :

SYNCHRONOUS

Memory Width :

18

Additional Feature :

FLOW-THROUGH OR PIPELINED ARCHITECTURE

RoHS :

Non-Compliant

Organization :

128KX18

Qualification Status :

COMMERCIAL

Pin Count :

256

Number of Words :

131072 words

Peak Reflow Temperature (Cel) :

225

Surface Mount :

yes

Clock Frequency :

133 MHz

Number of Terminals :

256

Product Status :

Active

Pbfree Code :

No

Manufacturer :

Rochester Electronics LLC

Access Time :

4.7 ns

Memory IC Type :

DUAL-PORT SRAM

Length :

17 mm

Package :

Bulk

Terminal Position :

BOTTOM

Operating Temperature :

0°C ~ 70°C (TA)

Reach Compliance Code :

Unknown

JESD-30 Code :

S-PBGA-B256

Voltage - Supply :

1.7V ~ 1.9V

Memory Type :

Volatile

Series :

-