CYD09S36V18-167BBXC

Manufacturer :

Infineon Technologies

Product Category :

Memory

Terminal Position :

BOTTOM

Memory Format :

SRAM

Output Characteristics :

3-STATE

Height Seated (Max) :

1.7mm

Mounting Type :

Surface Mount

Radiation Hardening :

No

JESD-609 Code :

e1

Package / Case :

256-LBGA

Mount :

Surface Mount

Length :

17mm

Address Bus Width :

18b

Sync/Async :

SYNCHRONOUS

Memory Type :

Volatile

Memory Width :

36

Memory Size :

9Mb 256K x 36

Pbfree Code :

yes

Number of Pins :

256

Published :

2006

Packaging :

Tray

Supply Voltage :

1.5V

Lead Free :

Lead Free

Operating Temperature :

0°C~70°C TA

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Peak Reflow Temperature (Cel) :

260

Voltage - Supply :

1.42V~1.58V 1.7V~1.9V

Additional Feature :

PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V

I/O Type :

COMMON

Base Part Number :

CYD09S36

Operating Supply Voltage :

1.8V

Factory Lead Time :

15 Weeks

Number of Functions :

1

Number of Terminations :

256

Nominal Supply Current :

570mA

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Access Time :

4ns

Terminal Pitch :

1mm

Memory Interface :

Parallel

Word Size :

36b

Standby Voltage-Min :

1.4V

Pin Count :

256

Number of Ports :

2

RoHS Status :

ROHS3 Compliant

Supply Voltage-Max (Vsup) :

1.58V

Density :

9 Mb

Clock Frequency :

167MHz

Time@Peak Reflow Temperature-Max (s) :

30