CPH6355-TL-W
- Mfr.Part #
- CPH6355-TL-W
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- SINGLE P-CHANNEL POWER MOSFET, -
- Stock
- 43,977
- In Stock :
- 43,977
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2012
- Terminal Form :
- Gull wing
- Operating Mode :
- ENHANCEMENT MODE
- Contact Plating :
- Tin
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 11.4 ns
- Drain Current-Max (Abs) (ID) :
- 3A
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 30V
- JESD-609 Code :
- e6
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 3A Ta
- JESD-30 Code :
- R-PDSO-G6
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Reach Compliance Code :
- not_compliant
- FET Type :
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 3.9nC @ 10V
- Factory Lead Time :
- 4 Weeks
- Vgs(th) (Max) @ Id :
- 2.6V @ 1mA
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 20V
- Mount :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Rise Time :
- 6.6ns
- DS Breakdown Voltage-Min :
- 30V
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 10V
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Turn On Delay Time :
- 4.6 ns
- Number of Terminations :
- 6
- Continuous Drain Current (ID) :
- 3A
- Turn-Off Delay Time :
- 19.4 ns
- Vgs (Max) :
- ±20V
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Rds On (Max) @ Id, Vgs :
- 169m Ω @ 1.5A, 10V
- Drain-source On Resistance-Max :
- 0.169Ohm
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 3 days ago)
- Input Capacitance (Ciss) (Max) @ Vds :
- 172pF @ 10V
- Power Dissipation-Max :
- 1.6W Ta
- Pulsed Drain Current-Max (IDM) :
- 12A
- Datasheets
- CPH6355-TL-W

P-Channel Tape & Reel (TR) 169m Ω @ 1.5A, 10V ±20V 172pF @ 10V 3.9nC @ 10V 30V SOT-23-6 Thin, TSOT-23-6
CPH6355-TL-W Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 172pF @ 10V.This device conducts a continuous drain current (ID) of 3A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 3A.When the device is turned off, a turn-off delay time of 19.4 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 12A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 4.6 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 30V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4V 10V volts (4V 10V).
CPH6355-TL-W Features
a continuous drain current (ID) of 3A
the turn-off delay time is 19.4 ns
based on its rated peak drain current 12A.
a 30V drain to source voltage (Vdss)
CPH6355-TL-W Applications
There are a lot of ON Semiconductor
CPH6355-TL-W applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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