CPH6122-TL-E

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Mfr.Part #
CPH6122-TL-E
Manufacturer
onsemi
Package / Case
SOT-23-6 Thin, TSOT-23-6
Datasheet
Download
Description
TRANS PNP 30V 3A 6CPH
Stock
31,599
In Stock :
31,599

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Operating Temperature :
150°C TJ
Packaging :
Tape and Reel (TR)
Contact Plating :
Tin
Collector Base Voltage (VCBO) :
30V
Collector Emitter Voltage (VCEO) :
30V
Power Dissipation :
1.3W
Transistor Type :
PNP
Surface Mount :
yes
Pin Count :
6
Package / Case :
SOT-23-6 Thin, TSOT-23-6
Factory Lead Time :
5 Weeks
Height :
900μm
Reach Compliance Code :
not_compliant
Terminal Form :
Gull wing
Pbfree Code :
yes
Emitter Base Voltage (VEBO) :
5V
Transistor Application :
SWITCHING
Number of Terminations :
6
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Collector Emitter Saturation Voltage :
-270mV
Current - Collector Cutoff (Max) :
100nA ICBO
Frequency :
400MHz
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Published :
2012
Collector Emitter Breakdown Voltage :
30V
Length :
2.9mm
Max Power Dissipation :
1.3W
Lead Free :
Lead Free
Max Collector Current :
3A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vce Saturation (Max) @ Ib, Ic :
180mV @ 75mA, 1.5A
Number of Elements :
1
Transistor Element Material :
SILICON
Polarity/Channel Type :
PNP
Transition Frequency :
400MHz
Number of Pins :
6
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Width :
1.6mm
ECCN Code :
EAR99
Element Configuration :
Single
hFE Min :
200
Current - Collector (Ic) (Max) :
3A
RoHS Status :
ROHS3 Compliant
Mounting Type :
Surface Mount
JESD-609 Code :
e6
Terminal Position :
Dual
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 500mA 2V
Datasheets
CPH6122-TL-E
Introducing Transistors - Bipolar (BJT) - Single onsemi CPH6122-TL-E from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Package / Case:SOT-23-6 Thin, TSOT-23-6, Number of Terminations:6, Number of Pins:6, Mounting Type:Surface Mount, CPH6122-TL-E pinout, CPH6122-TL-E datasheet PDF, CPH6122-TL-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi CPH6122-TL-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi CPH6122-TL-E


PNP 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON PNP SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Surface Mount

CPH6122-TL-E Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 500mA 2V.The collector emitter saturation voltage is -270mV, which allows for maximum design flexibility.When VCE saturation is 180mV @ 75mA, 1.5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 400MHz.A maximum collector current of 3A volts can be achieved.

CPH6122-TL-E Features


the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of -270mV
the vce saturation(Max) is 180mV @ 75mA, 1.5A
the emitter base voltage is kept at 5V
a transition frequency of 400MHz


CPH6122-TL-E Applications


There are a lot of ON Semiconductor
CPH6122-TL-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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