CPH6122-TL-E
- Mfr.Part #
- CPH6122-TL-E
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- TRANS PNP 30V 3A 6CPH
- Stock
- 31,599
- In Stock :
- 31,599
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Reel (TR)
- Contact Plating :
- Tin
- Collector Base Voltage (VCBO) :
- 30V
- Collector Emitter Voltage (VCEO) :
- 30V
- Power Dissipation :
- 1.3W
- Transistor Type :
- PNP
- Surface Mount :
- yes
- Pin Count :
- 6
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Factory Lead Time :
- 5 Weeks
- Height :
- 900μm
- Reach Compliance Code :
- not_compliant
- Terminal Form :
- Gull wing
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 6
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Emitter Saturation Voltage :
- -270mV
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Frequency :
- 400MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Published :
- 2012
- Collector Emitter Breakdown Voltage :
- 30V
- Length :
- 2.9mm
- Max Power Dissipation :
- 1.3W
- Lead Free :
- Lead Free
- Max Collector Current :
- 3A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 180mV @ 75mA, 1.5A
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- PNP
- Transition Frequency :
- 400MHz
- Number of Pins :
- 6
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Width :
- 1.6mm
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- hFE Min :
- 200
- Current - Collector (Ic) (Max) :
- 3A
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e6
- Terminal Position :
- Dual
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 2V
- Datasheets
- CPH6122-TL-E

PNP 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON PNP SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Surface Mount
CPH6122-TL-E Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 500mA 2V.The collector emitter saturation voltage is -270mV, which allows for maximum design flexibility.When VCE saturation is 180mV @ 75mA, 1.5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 400MHz.A maximum collector current of 3A volts can be achieved.
CPH6122-TL-E Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of -270mV
the vce saturation(Max) is 180mV @ 75mA, 1.5A
the emitter base voltage is kept at 5V
a transition frequency of 400MHz
CPH6122-TL-E Applications
There are a lot of ON Semiconductor
CPH6122-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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