CPH6123-TL-E

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Mfr.Part #
CPH6123-TL-E
Manufacturer
onsemi
Package / Case
SOT-23-6 Thin, TSOT-23-6
Datasheet
Download
Description
TRANS PNP 50V 3A 6CPH
Stock
3,208
In Stock :
3,208

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Emitter Base Voltage (VEBO) :
-6V
Number of Pins :
6
Height :
900μm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Surface Mount :
yes
RoHS Status :
ROHS3 Compliant
JESD-609 Code :
e6
Lead Free :
Lead Free
Max Collector Current :
3A
Number of Elements :
1
Transistor Application :
SWITCHING
Max Power Dissipation :
1.3W
Vce Saturation (Max) @ Ib, Ic :
650mV @ 100mA, 2A
Polarity/Channel Type :
PNP
Terminal Form :
Gull wing
Base Part Number :
CPH6123
Element Configuration :
Single
Current - Collector Cutoff (Max) :
1μA ICBO
Collector Emitter Saturation Voltage :
-240mV
Pin Count :
6
Transistor Element Material :
SILICON
Collector Emitter Voltage (VCEO) :
50V
Package / Case :
SOT-23-6 Thin, TSOT-23-6
Contact Plating :
Tin
Operating Temperature :
150°C TJ
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Reach Compliance Code :
not_compliant
Length :
2.9mm
Max Frequency :
390MHz
Collector Emitter Breakdown Voltage :
50V
Transition Frequency :
390MHz
Transistor Type :
PNP
Width :
1.6mm
Pbfree Code :
yes
Packaging :
Tape and Reel (TR)
Published :
2003
Gain Bandwidth Product :
390MHz
Max Breakdown Voltage :
50V
Factory Lead Time :
11 Weeks
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 100mA 2V
Collector Base Voltage (VCBO) :
-50V
Mounting Type :
Surface Mount
ECCN Code :
EAR99
Terminal Position :
Dual
Number of Terminations :
6
Datasheets
CPH6123-TL-E
Introducing Transistors - Bipolar (BJT) - Single onsemi CPH6123-TL-E from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:6, Base Part Number:CPH6123, Package / Case:SOT-23-6 Thin, TSOT-23-6, Operating Temperature:150°C TJ, Mounting Type:Surface Mount, Number of Terminations:6, CPH6123-TL-E pinout, CPH6123-TL-E datasheet PDF, CPH6123-TL-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi CPH6123-TL-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi CPH6123-TL-E


PNP 150°C TJ 1μA ICBO 1 Elements 6 Terminations SILICON PNP SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Surface Mount

CPH6123-TL-E Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 100mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -240mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 650mV @ 100mA, 2A.The emitter base voltage can be kept at -6V for high efficiency.The part has a transition frequency of 390MHz.The breakdown input voltage is 50V volts.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.

CPH6123-TL-E Features


the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -240mV
the vce saturation(Max) is 650mV @ 100mA, 2A
the emitter base voltage is kept at -6V
a transition frequency of 390MHz


CPH6123-TL-E Applications


There are a lot of ON Semiconductor
CPH6123-TL-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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