CPH5517-TL-E

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Breakdown Voltage :

50V

Vce Saturation (Max) @ Ib, Ic :

430mV @ 10mA, 500mA

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Height :

900μm

hFE Min :

200

Max Collector Current :

1A

Polarity :

NPN, PNP

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

ECCN Code :

EAR99

Factory Lead Time :

2 Weeks

Collector Base Voltage (VCBO) :

60V

Collector Emitter Breakdown Voltage :

50V

Mounting Type :

Surface Mount

Number of Pins :

5

Lead Free :

Lead Free

Max Frequency :

1MHz

Current - Collector Cutoff (Max) :

100nA ICBO

Number of Elements :

2

Transistor Application :

SWITCHING

Terminal Position :

Dual

Terminal Form :

Gull wing

Transistor Type :

NPN, PNP (Common Base)

Transition Frequency :

420MHz

JESD-609 Code :

e6

Width :

1.6mm

Configuration :

COMMON BASE, 2 ELEMENTS

Max Power Dissipation :

900mW

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Contact Plating :

Tin

Operating Temperature :

150°C TJ

Collector Emitter Voltage (VCEO) :

50V

Pin Count :

5

Emitter Base Voltage (VEBO) :

5V

Package / Case :

SOT-23-5 Thin, TSOT-23-5

Length :

2.9mm

Frequency - Transition :

420MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2012

Number of Terminations :

5

Pbfree Code :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 100mA 2V