CPH5506-TL-E

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Width :

1.6mm

Element Configuration :

Dual

Operating Temperature :

150°C TJ

Transistor Type :

NPN, PNP (Emitter Coupled)

Max Breakdown Voltage :

30V

Transistor Application :

SWITCHING

Max Collector Current :

1.5A

Pbfree Code :

yes

Frequency - Transition :

500MHz 450MHz

Collector Base Voltage (VCBO) :

40V

Collector Emitter Voltage (VCEO) :

30V

Gain Bandwidth Product :

500MHz

Collector Emitter Saturation Voltage :

150mV

Height :

900μm

Surface Mount :

yes

Package / Case :

SOT-23-5 Thin, TSOT-23-5

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

30V

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 100mA 2V

Current - Collector Cutoff (Max) :

100nA ICBO

Max Power Dissipation :

1.2W

Packaging :

Tape and Reel (TR)

Pin Count :

5

Transition Frequency :

500MHz

Terminal Form :

Gull wing

Length :

2.9mm

Polarity :

NPN, PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e6

Published :

2012

ECCN Code :

EAR99

Number of Pins :

5

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

Lead Free :

Lead Free

Number of Terminations :

5

Factory Lead Time :

7 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Vce Saturation (Max) @ Ib, Ic :

225mV @ 15mA, 750mA / 375mV @ 15mA, 750mA

Transistor Element Material :

SILICON

Power Dissipation :

1.2W

hFE Min :

200

Number of Elements :

2

Emitter Base Voltage (VEBO) :

5V