CJD122 TR13

Manufacturer :

Central Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single

RoHS Status :

ROHS3 Compliant

Qualification Status :

Not Qualified

Operating Temperature :

-65°C~150°C TJ

JESD-609 Code :

e3

Transistor Type :

NPN - Darlington

VCEsat-Max :

4 V

Number of Terminations :

2

Published :

2016

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

HTS Code :

8541.29.00.95

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 4A 4V

Power Dissipation Ambient-Max :

20W

Surface Mount :

yes

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Elements :

1

Power - Max :

1.75W

Case Connection :

COLLECTOR

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Voltage - Collector Emitter Breakdown (Max) :

100V

Vce Saturation (Max) @ Ib, Ic :

4V @ 80mA, 8A

Terminal Finish :

Matte Tin (Sn)

Packaging :

Cut Tape (CT)

Transition Frequency :

4MHz

Pbfree Code :

yes

Power Dissipation-Max (Abs) :

20W

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

10

Collector-Base Capacitance-Max :

200pF

Mounting Type :

Surface Mount

Terminal Position :

Single

Current - Collector (Ic) (Max) :

8A

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Frequency - Transition :

4MHz

Current - Collector Cutoff (Max) :

10μA

Factory Lead Time :

5 Weeks

Polarity/Channel Type :

NPN