CJD112 TR13

Manufacturer :

Central Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Power Dissipation-Max (Abs) :

20W

Current - Collector Cutoff (Max) :

20μA

Packaging :

Cut Tape (CT)

RoHS Status :

ROHS3 Compliant

Published :

2013

Surface Mount :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 2A 3V

Terminal Position :

Single

Mounting Type :

Surface Mount

Transition Frequency :

25MHz

JESD-30 Code :

R-PSSO-G2

Factory Lead Time :

13 Weeks

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

10

HTS Code :

8541.29.00.95

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Collector-Base Capacitance-Max :

100pF

Power Dissipation Ambient-Max :

20W

Current - Collector (Ic) (Max) :

2A

Qualification Status :

Not Qualified

Polarity/Channel Type :

NPN

Number of Terminations :

2

Operating Temperature :

-65°C~150°C TJ

Transistor Type :

NPN - Darlington

Number of Elements :

1

Frequency - Transition :

25MHz

Terminal Form :

Gull wing

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vce Saturation (Max) @ Ib, Ic :

3V @ 40mA, 4A

ECCN Code :

EAR99

Voltage - Collector Emitter Breakdown (Max) :

100V

Power - Max :

1.75W

Case Connection :

COLLECTOR

VCEsat-Max :

3 V