CDM2208-800FP

Manufacturer :

Central Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Polarity/Channel Type :

N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code :

TO-220AB

Package Shape :

RECTANGULAR

DS Breakdown Voltage-Min :

800 V

Package / Case :

TO-220-3 Full Pack

Reach Compliance Code :

Compliant

Drain-source On Resistance-Max :

1.6 Ω

Vgs (Max) :

30V

Surface Mount :

No

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

32 A

FET Feature :

-

Supplier Device Package :

TO-220FP

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSFM-T3

Mounting Type :

Through Hole

Series :

-

Gate Charge (Qg) (Max) @ Vgs :

24.45 nC @ 10 V

Rds On (Max) @ Id, Vgs :

1.6Ohm @ 4A, 10V

Current - Continuous Drain (Id) @ 25°C :

8A (Tc)

Terminal Form :

THROUGH-HOLE

Case Connection :

Isolated

Power Dissipation (Max) :

57W (Tc)

Terminal Position :

Single

Technology :

MOSFET (Metal Oxide)

Transistor Element Material :

SILICON

Product Status :

Obsolete

FET Type :

N-Channel

Drive Voltage (Max Rds On, Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Number of Terminals :

3

Avalanche Energy Rating (Eas) :

534 mJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

-55°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss) :

800 V

Input Capacitance (Ciss) (Max) @ Vds :

1110 pF @ 25 V

Package :

Tube