CDM22010-650 SL

Manufacturer :

Central Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

No

Power Dissipation-Max :

2W Ta 156W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSFM-T3

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

DS Breakdown Voltage-Min :

650V

Vgs (Max) :

30V

Package / Case :

TO-220-3

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

1168pF @ 25V

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

1 Ω @ 5A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Drain to Source Voltage (Vdss) :

650V

Published :

2016

Case Connection :

DRAIN

Transistor Application :

SWITCHING

HTS Code :

8541.29.00.95

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

10A

Drain-source On Resistance-Max :

1Ohm

Factory Lead Time :

18 Weeks