CDM2206-800LR

Manufacturer :

Central Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Package :

Tube

FET Feature :

-

Vgs (Max) :

30V

Package Shape :

RECTANGULAR

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pulsed Drain Current-Max (IDM) :

24 A

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

4V @ 250µA

Surface Mount :

No

Reach Compliance Code :

Compliant

Polarity/Channel Type :

N-Channel

Rds On (Max) @ Id, Vgs :

950mOhm @ 3A, 10V

Mounting Type :

Through Hole

Number of Elements :

1

RoHS :

Non-Compliant

Drive Voltage (Max Rds On, Min Rds On) :

10V

Series :

-

Terminal Form :

THROUGH-HOLE

Product Status :

Obsolete

Number of Terminals :

3

Terminal Position :

Single

DS Breakdown Voltage-Min :

800 V

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSFM-T3

Configuration :

SINGLE WITH BUILT-IN DIODE

Supplier Device Package :

TO-220-3

Power Dissipation (Max) :

110W (Tc)

Technology :

MOSFET (Metal Oxide)

Operating Temperature :

-55°C ~ 150°C (TJ)

Gate Charge (Qg) (Max) @ Vgs :

24.3 nC @ 10 V

Drain-source On Resistance-Max :

0.95 Ω

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

474.7 pF @ 100 V

Avalanche Energy Rating (Eas) :

250 mJ

Package / Case :

TO-220-3

Drain Current-Max (Abs) (ID) :

6 A

Drain to Source Voltage (Vdss) :

800 V

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

6A (Tc)

Power Dissipation-Max (Abs) :

110 W