BUZ11-NR4941

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Package / Case :

TO-220-3

JEDEC-95 Code :

TO-220AB

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

50V

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.04Ohm

Number of Elements :

1

Case Connection :

DRAIN

Published :

2001

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

No

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

50V

Input Capacitance (Ciss) (Max) @ Vds :

2000pF @ 25V

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Rds On (Max) @ Id, Vgs :

40m Ω @ 15A, 10V

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

120A

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 1mA

Terminal Finish :

Tin (Sn)

JESD-30 Code :

R-PSFM-T3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

9 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

30A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

Packaging :

Tube

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

75W Tc

Terminal Position :

Single